Peak breakdown voltage Rate BVDSS, peak impulse current IAS By setting parameters such as Vgs, Ias, L, Vdd, etc., monitor the actual peak voltage that can be absorbed at least under the set avalanche energy, to ensure that the circuit can continue to o

The avalanche energy borne by the device is affected by the junction temperature. The larger the load inductance, the greater the energy to be released in an instant, and the faster the junction temperature rises during the release process, making it easier to breakdown. That is to say, the larger the load inductance, ……

RDS (on) testing method for NMOS: Step: 1. Connect the wires according to the diagram above, 2. Set the V1 power supply to 10V, 3. The V2 power supply is set to within 5V and the current limit is set to 200mA, 4. V1 is powered on, V2 is powered on, making the MOS tube cond……